Martin Eickhoff
0000-0001-6493-269X
Universität Bremen
175 papers found
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Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si3N4/SiO2 System
High temperature piezoresistive β-SiC-on-SOI pressure sensor with on chip SiC thermistor
Influence of the silicon overlayer thickness of SOI unibond substrates on β-SIC heteroepitaxy
The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD
Selective growth of high-quality 3C-SiC using a SiO 2 sacrificial-layer technique
High quality β-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step
Silicon compatible materials for harsh environment sensors
A high temperature pressure sensor prepared by selective deposition of cubic silicon carbide on SOI substrates
Heteroepitaxial growth of 3C-S1C on SOI for sensor applications
SOL thickness dependence of residual strain in SOI material
High Temperature Piezoresistive β-SiC-on-SOI Pressure Sensor for Combustion Engines
Rapid plasma etching of cubic SiC using NF3/O2 gas mixtures
High temperature pressure sensor with β-SiC piezoresistors on SOI substrates
Influence of crystal quality on the piezoresistive effect of β-SiC between RT and 450°C measured by using microstructures
Group III-nitride devices for field effect based gas detection
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