All papers authored by Ignacio Martin-Bragado
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2018
Ignacio Martin-Bragado 
,
Ricardo Borges,
Juan Pablo Balbuena,
Martin Jaraiz
,
Ricardo Borges,
Juan Pablo Balbuena,
Martin Jaraiz
Kinetic Monte Carlo simulation for semiconductor processing: A review
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2015
G. Valles,
A. L. Cazalilla,
A. L. Cazalilla,
C. Gonzalez ,
I. Martin-Bragado ,
A. Prada,
R. Iglesias,
J. M. Perlado,
A. Rivera
,
I. Martin-Bragado ,
A. Prada,
R. Iglesias,
J. M. Perlado,
A. Rivera
A multiscale approach to defect evolution in tungsten under helium irradiation
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G. Valles,
Cesar González ,
I. Martín Bragado ,
Roberto Luis Iglesias Pastrana,
J. M. Perlado,
A. Rivera
,
I. Martín Bragado ,
Roberto Luis Iglesias Pastrana,
J. M. Perlado,
A. Rivera
The influence of high grain boundary density on helium retention in tungsten
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M. Prieto-Depedro,
I. Romero,
I. Martin-Bragado
Multiscale modeling of defect formation during solid-phase epitaxy regrowth of silicon
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Jon M. Molina-Aldareguia ,
Ignacio Martín-Bragado ,
Javier Llorca
,
Ignacio Martín-Bragado ,
Javier Llorca
Mechanical behavior of nanoscale multilayers
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B. Sklenard,
P. Batude,
L. Pasini,
C. Fenouillet-Beranger,
B. Previtali,
M. Casse,
L. Brunet,
P. Rivallin,
J.-C. Barbe,
C. Tavernier,
S. Cristoloveanu,
M. Vinet,
I. Martin-Bragado
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Ignacio Dopico,
Pedro Castrillo,
Ignacio Martin-Bragado
Modeling of boron diffusion in silicon–germanium alloys using Kinetic Monte Carlo
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Ignacio Martin-Bragado ,
Antonio Rivera ,
Gonzalo Valles,
Jose Luis Gomez-Selles ,
María J. Caturla
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,
Antonio Rivera ,
Gonzalo Valles,
Jose Luis Gomez-Selles ,
María J. Caturla
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Ignacio Martin-Bragado ,
Nikolas Zographos,
Pedro Castrillo
,
Nikolas Zographos,
Pedro Castrillo
Atomistic modelling and simulation of arsenic diffusion including mobile arsenic clusters
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Benoit Sklenard,
Perrine Batude,
Quentin Rafhay,
Ignacio Martin-Bragado ,
Cuiqin Q. Xu,
Bernard Previtali,
Benjamin Colombeau,
Fareen-Adeni Khaja,
Sorin Cristoloveanu,
Pierrette Rivallin,
Clement Tavernier,
Thierry Poiroux
,
Cuiqin Q. Xu,
Bernard Previtali,
Benjamin Colombeau,
Fareen-Adeni Khaja,
Sorin Cristoloveanu,
Pierrette Rivallin,
Clement Tavernier,
Thierry Poiroux
Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs
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