Roberto Bergamaschini
University of Milano-Bicocca
33 papers found
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Doubling the mobility of InAs/InGaAs selective area grown nanowires
UploadReentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A
Download from doi.orgSelf-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates
Download from pubs.acs.orgSelective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study
Download from doi.orgGrowth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach
Download from doi.orgStrain engineering in Ge/GeSn core/shell nanowires
UploadDislocation-Free SiGe/Si Heterostructures
Download from doi.orgSolving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture
Download from aip.scitation.orgPhase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film
UploadDynamics of pit filling in heteroepitaxy via phase-field simulations
UploadEngineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si
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