Andrey Markeev
0000-0001-6777-5706
42 papers found
Refreshing results…
Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
Erratum: “Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties” [Appl. Phys. Lett. 109, 192903 (2016)]
Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties
Atomic layer deposition of tantalum oxide with controlled oxygen deficiency for making resistive memory structures
Charge transport in thin layers of ferroelectric Hf0.5Zr0.5O2
Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition
Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
Corrigendum to “Confinement-free annealing induced ferroelectricity in Hf0·5Zr0.5O2 thin films” [Microelectron. Eng. 147 (2015) 15–18]
Full ALD Ta 2 O 5 -based stacks for resistive random access memory grown with in vacuo XPS monitoring
Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films
Effect of dielectric stoichiometry and interface chemical state on band alignment between tantalum oxide and platinum
Charge Transport Mechanism in Thin Films of Amorphous and Ferroelectric Hf0.5Zr0.5O2
Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices
Complementary and bipolar regimes of resistive switching in TiN/HfO2/TiN stacks grown by atomic-layer deposition: Complementary and bipolar regimes of resistive switching in TiN/HfO2/TiN stacks
Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary Hf x Al1 − x O y oxide films
Resistive switching effect in HfxAl1−xOy with a graded Al depth profile studied by hard X-ray photoelectron spectroscopy
Multilevel resistive switching in ternary HfxAl1−xOy oxide with graded Al depth profile
Reference samples for the spatial characteristics of nanostructures based on amorphous multilayer coatings
Atomic-layer deposition of thin titanium dioxide films from tetramethoxytitanium and water
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