Heather Yates
0000-0002-3261-0183
University of Salford
78 papers found
Refreshing results…
Atmospheric pressure MOCVD growth of crystalline InP in opals
Novel quantum confined structures via atmospheric pressure MOCVD growth in asbestos and opals
Enhancement of the photonic gap of opal-based three-dimensional gratings
Optical properties of self-assembled arrays of InP quantum wires confined in nanotubes of chrysotile asbestos
Optical Properties of Nano Crystalline InP in Opal 3-Dimensional Gratings
Growth of II–VI compounds by metal–organic chemical vapour deposition. Propylene sulfide: a novel sulfur-containing precursor for MOCVD growth of ZnS
Tackling problems in the growth of ZnS/Se through precursor design
In-Situ mechanistic studies of the reaction of trimethylgallium and phosphine in zeolite H-Y
Preparation and purification of dimethylzinc and the effect of iodine doping on the opto-electronic properties of epitaxial ZnSe layers grown by metalorganic chemical vapour deposition
High resolution and conventional transmission electron microscopy in the characterisation of thin films and interfaces involving II–VI materials
Characterization of ZnS grown by metal-organic chemical vapour deposition on GaAs(100) using t-butyl mercaptan and dimethylzinc
The M-centre in zinc selenide grown by metalorganic chemical vapour deposition
ZnS grown by metalorganic chemical vapour deposition (MOCVD) on GaAs (100) using t-butyl mercaptan and dimethylzinc
Controlling the sulphur content of ZnSe1−ySyepitaxial layers grown by metalorganic chemical vapor deposition using diethyl selenide, hydrogen sulphide, and dimethylzinc
Purity of zinc precursors and the properties of epitaxial ZnSe grown by atmospheric pressure metalorganic chemical vapour deposition
Structural and compositional integrity of lattice‐matched ZnSe0.95S0.05on (100) orientated GaAs
Blue electroluminescence from ZnSe/Langmuir-Blodgett film MIS diodes
ROOM TEMPERATURE PHOTOLUMINESCENCE OF EPITAXIAL ZnSe//1// Minus //yS//y(0 Less Than Equivalent to Y Less Than Equivalent to 0. 25) GROWN BY ATMOSPHERIC PRESSURE METAL ORGANIC VAPOUR PHASE EPITAXY.
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