Xiaolei Wang
0000-0001-9431-0058
10 papers found
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Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfO x at Hf0.5Zr0.5O2/SiO x Interface to Suppress Oxygen Vacancy Generation
Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) Gate Structure During Endurance Fatigue
Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure
Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr1-x O2/Interlayer/Si (MFIS) Gate Structure
The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs
An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method
Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack
Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences
Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application
Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs
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