Debashis Panda
www.mendeley.com
0000-0002-2020-6482
7 papers found
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Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications
Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure
Synaptic behaviour of TiO x /HfO2 RRAM enhanced by inserting ultrathin Al2O3 layer for neuromorphic computing
Barrier Layer Induced Switching Stability in Ga:ZnO Nanorods Based Electrochemical Metallization Memory
Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning
Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme
Improving linearity by introducing Al in HfO2 as a memristor synapse device
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