Researcher
Vaidas Pačebutas
Center for Physical Sciences and Technology
Statistics
55 papers found
All papers authored by Vaidas Pačebutas
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Viktorija Strazdienė,
Benjaminas Šebeka,
Andrius Maneikis,
Mindaugas Kamarauskas ,
Andrejus Geižutis,
Martynas Skapas ,
Artūras Suchodolskis,
Mantas Drazdys,
Vaidas Pačebutas ,
Arūnas Krotkus
Epitaxial lift-off method for GaAs solar cells with high Al content AlGaAs window layer
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J. Devenson,
S. Stanionytė ,
M. Skapas ,
V. Karpus ,
B. Čechavičius ,
S. Tumėnas ,
V. Strazdienė ,
B. Šebeka,
V. Pačebutas
Epitaxial growth of GaAsBi on thin step-graded InGaAs buffer layers
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Vaidas Pačebutas ,
Andrejus Geižutis,
Mindaugas Kamarauskas,
Mantas Drazdys,
Matas Rudzikas,
Rokas Kondrotas,
Arnas Naujokaitis,
Ignas Nevinskas,
Benjaminas Šebeka,
Viktorija Strazdienė,
Arūnas Krotkus
Performance analysis of GaAsBi/InGaAs heterostructure for III-V multi-junction solar cells
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Bronislovas Čechavičius ,
Vytautas Karpus ,
Lukas Jočionis,
Saulius Tumėnas ,
Jan Devenson,
Vaidas Pačebutas ,
Sandra Stanionytė ,
Viktorija Strazdienė,
Andrejus Geižutis,
Mária Čaplovičová ,
Viliam Vretenár,
Michael Walls,
Arūnas Krotkus
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S. Stanionytė ,
R. Norkus ,
A. Bičiūnas ,
A. Urbanowicz,
A. Krotkus
Terahertz pulse emission from GaInAsBi
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Arūnas Krotkus
Terahertz emission from GaInAs p-i-n diodes photoexcited by femtosecond laser pulses
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Andrzej Urbanowicz,
Paulius Cicėnas,
Sandra Stanionytė,
Andrius Bičiūnas,
Ignas Nevinskas,
Arūnas Krotkus
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P. Ludewig ,
W. Stolz,
K. Volz,
R. Butkutė,
V. Pačebutas ,
A. Geizutis,
A. Krotkus,
S. J. Sweeney
Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers
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V. L. Malevich
Spectral dependence of anisotropic picosecond photoconductivity in cubic semiconductors
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Bronislovas Čechavičius,
Rokas Kondrotas,
Ramūnas Nedzinskas,
Andrejus Geižutis,
Arūnas Krotkus
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L. Natterman,
Z. Bushell ,
W. Stolz,
K. Volz,
C. A. Broderick,
M. Usman,
P. E. Harnedy,
E. P. Oreilly,
R. Butkute
and 3 other authors
Electrically injected GaAsBi quantum well lasers
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Renata Butkutė,
Polina Svidovsky,
Viktorija Strazdienė,
Arūnas Krotkus
Growth and characterization of UTC photo-diodes containing GaAs1−xBix absorber layer
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V. Bukauskas,
B. Čechavičius,
B. Čechavičius,
R. Kundrotas,
P. Ludewig ,
K. Volz,
A. Krotkus
Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth
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