Naoka Nagamura
Japan Science and Technology Agency
27 papers found
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Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping
Download from doi.orgSpectrum adapted expectation-maximization algorithm for high-throughput peak shift analysis
Download from tandfonline.comOperation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
Download from doi.orgDirect observation of charge transfer region at interfaces in graphene devices
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