All papers authored by Leopold Scheffler
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2022
L. Scheffler 
,
A. Lei ,
S. Duun,
B. Julsgaard
,
A. Lei ,
S. Duun,
B. Julsgaard
On the nature of thermally activated defects in n-type FZ silicon grown in nitrogen atmosphere
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2019
L. Scheffler ,
S. Roesgaard ,
J. L. Hansen,
A. Nylandsted Larsen,
B. Julsgaard
,
S. Roesgaard ,
J. L. Hansen,
A. Nylandsted Larsen,
B. Julsgaard
Tin-based donors in SiSn alloys
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Ievgen Boturchuk ,
Leopold Scheffler ,
Arne Nylandsted Larsen,
Brian Julsgaard
,
Leopold Scheffler ,
Arne Nylandsted Larsen,
Brian Julsgaard
Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN
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2018
L. Scheffler ,
M. J. Haastrup,
S. Roesgaard ,
J. L. Hansen,
A. Nylandsted Larsen,
B. Julsgaard
,
M. J. Haastrup,
S. Roesgaard ,
J. L. Hansen,
A. Nylandsted Larsen,
B. Julsgaard
Embedded tin nanocrystals in silicon—an electrical characterization
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