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Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
Download from doi.orgCryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
Download from doi.orgStudy of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
Download from doi.orgNovel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate
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