Mattias Thorsell
0000-0003-0415-7219
Chalmers tekniska högskola
4 papers found
Refreshing results…
Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures
Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors
Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier
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