Rino Choi
0000-0003-0604-7849
3 papers found
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Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer
High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane
Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices
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