Felix Nippert
0000-0001-9110-6369
8 papers found
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Gain Characteristics of Optically Pumped UVC Lasers with Wide AlGaN Single‐Quantum‐Well Active Regions
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements
Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)
Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy
Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells
Recombination dynamics in InxGa1−xN quantum wells - Contribution of excited subband recombination to carrier leakage
Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces
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