Mingwei Hong
0000-0003-4657-0933
9 papers found
Refreshing results…
Electrically sign-reversible topological Hall effect in a top-gated topological insulator (Bi,Sb)2Te3 grown on europium iron garnet
Effective passivation of p- and n-type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border traps
GaAs MOSFETs with in situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation
Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics
Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric
In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures
Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative study
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)
Ultra-high thermal stability and extremely low D on HfO2/p-GaAs(001) interface
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