Hajime Tanaka
0000-0001-9728-5687
Kyoto University
19 papers found
Refreshing results…
Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs
Franz–Keldysh effect in 4H-SiC p–n junction diodes under high electric field along the 〈11$\bar{{\bf{2}}}$0〉 direction
Estimation of Threshold Voltage in SiC Short-Channel MOSFETs
Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure
Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires
Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation
Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation
Theoretical analysis of quasi-ballistic hole transport in Ge and Si nanowires focusing on energy relaxation process
Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model
Theoretical analysis of high-field hole transport in germanium and silicon nanowires
Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires
Analysis of high-field hole transport in germanium and silicon nanowires based on Boltzmann’s transport equation
Impacts of orientation and cross-sectional shape on hole mobility of Si nanowire MOSFETs
Impacts of surface roughness scattering on hole mobility in germanium nanowires
Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires
Phonon-Limited Electron Mobility in Rectangular Cross-Sectional Ge Nanowires
Orientation and size effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires
Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires
Size and geometric effects on conduction band structure of GaAs nanowires
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