Jarosław Serafińczuk

Papers authored by Jarosław Serafińczuk

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2013 R. Korbutowicz, J. Wnek, P. Panachida, J. Serafińczuk

, R. Srnanek

Gallium oxide buffer layers for gallium nitride epitaxy

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2012 Maria Suszynska, Ludwina Krajczyk, Agnieszka Cizman, Jaroslaw Serafinczuk

Microstructure and microprecipitation in copper-doped soda-lime silicate glass

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Damian Radziewicz, Beata Sciana, Damian Pucicki, Jaroslaw Serafinczuk

, Marek Tlaczala, Magdalena Latkowska, Martin Florovic, Jaroslav Kovac

Influence of the MOVPE growth parameters on the properties of InGaAsN/GaAs MQW structures for solar cells application

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R. F. Szeloch, P. Janus, J. Serafińczuk

, P. M. Szecówka, G. Jóźwiak

Characterization of fatigued Al lines by means of SThM and XRD: Analysis using fast Fourier transform

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R. Oliva, J. Ibáñez, R. Cuscó, R. Kudrawiec, J. Serafinczuk

, O. Martínez, J. Jiménez, M. Henini, C. Boney, A. Bensaoula, L. Artús

Raman scattering by the E2h and A1(LO) phonons of InxGa1−xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy

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Szymon Jasiecki, Jarosław Serafińczuk

, Teodor Gotszalk, Grzegorz Schroeder

X-Ray Reflectometry Study of Self-Assembled Ionic Nanolayers

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2011 B. Ściana, D. Radziewicz, D. Pucicki, I. Zborowska-Lindert, J. Serafińczuk

, M. Tłaczała, M. Latkowska, J. Kováč, R. Srnanek

MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications

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M. Rudziński, R. Kudrawiec, L. Janicki, J. Serafinczuk

, R. Kucharski, M. Zając, J. Misiewicz, R. Doradziński, R. Dwiliński, W. Strupiński

Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method

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A. Wiatrowski, W. M. Posadowski, G. Jóźwiak, J. Serafińczuk

, R. Szeloch, T. Gotszalk

Standard and self-sustained magnetron sputtering deposited Cu films investigated by means of AFM and XRD

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A. Dziedzic, J. Radojewski, J. Serafińczuk

Guest editorial

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Jarosław Serafińczuk

, Jakub Pietrucha, Grzegorz Schroeder, Teodor P. Gotszalk

Thin film thickness determination using X-ray reflectivity and Savitzky–Golay algorithm

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2010 Robert Kucharski, Marcin Zajac, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Robert Kudrawiec, Jaroslaw Serafinczuk

, Jan Misiewicz, Robert Dwilinski

Structural and Optical Properties of Semipolar GaN Substrates Obtained by Ammonothermal Method

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R. Kudrawiec, M. Rudziński, R. Kucharski, M. Zając, R. Doradziński, L. P. Sierzputowski, J. Garczyński, J. Serafińczuk

, W. Strupiński, J. Misiewicz, R. Dwiliński

Optical and structural properties of m -plane GaN substrates grown by ammonothermal method and GaN epilayers grown on these substrates

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R. Dwiliński, R. Doradziński, J. Garczyński, L. Sierzputowski, R. Kucharski, M. Zajac, M. Rudziński, W. Strupiński, J. Serafińczuk

, R. Kudrawiec

Ammonothermal growth of GaN substrates

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H. Ashraf, R. Kudrawiec, J. L. Weyher, J. Serafinczuk

, J. Misiewicz, P. R. Hageman

Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism

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A. Podhorodecki, M. Banski, J. Misiewicz, J. Serafińczuk

, N. V. Gaponenko

Influence of Annealing on Excitation of Terbium Luminescence in YAlO[sub 3] Films Deposited onto Porous Anodic Alumina

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2009 R. Kudrawiec, P. Podemski, M. Motyka, J. Misiewicz, J. Serafińczuk

, A. Somers, J. P. Reithmaier, A. Forchel

Electromodulation spectroscopy of In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum wells

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R. Kudrawiec, M. Rudziński, J. Serafinczuk

, M. Zając, J. Misiewicz

Photoreflectance study of exciton energies and linewidths for homoepitaxial and heteroepitaxial GaN layers

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R. Kucharski, M. Rudziński, M. Zając, R. Doradziński, J. Garczyński, L. Sierzputowski, R. Kudrawiec, J. Serafińczuk

, W. Strupiński, R. Dwiliński

Nonpolar GaN substrates grown by ammonothermal method

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M. Motyka, L. Gelczuk, M. Dabrowska-Szata, J. Serafinczuk

, R. Kudrawiec, J. Misiewicz

Photoreflectance study of partially relaxed epitaxial InGaAs on GaAs

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Papers authored by Jarosław Serafińczuk