María José Sánchez
0000-0002-0382-8263
Instituto Balseiro
5 papers found
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Optimization of the multi-mem response of topotactic redox La1/2Sr1/2Mn1/2Co1/2O3−x
Key Role of Oxygen-Vacancy Electromigration in the Memristive Response of Ferroelectric Devices
Publisher's Note: “Large memcapacitance and memristance at Nb:SrTiO3/La0.5Sr0.5Mn0.5Co0.5O3-δ topotactic redox interface” [Appl. Phys. Lett. 116, 063502 (2020)]
Large memcapacitance and memristance at Nb:SrTiO3/La0.5Sr0.5Mn0.5Co0.5O3-δ topotactic redox interface
Selective activation of memristive interfaces in TaO x -based devices by controlling oxygen vacancies dynamics at the nanoscale
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