Shahab Mollah - Dissemin

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All papers authored by Shahab Mollah

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2021 Shahab Mollah

ORCID

, Kamal Hussain

ORCID

, Abdullah Mamun

ORCID

, Mikhail Gaevski

ORCID

, Grigory Simin, Mvs Chandrashekhar, Asif Khan

ORCID

High-current recessed gate enhancement-mode ultrawide bandgap Al _x Ga_1−xN channel MOSHFET with drain current 0.48 A mm⁻¹ and threshold voltage +3.6 V

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2020 Richard Floyd

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, Mikhail Gaevski, Md Didarul Alam, Samia Islam, Kamal Hussain, Abdullah Mamun

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, Shahab Mollah

ORCID

, Grigory Simin, Mvs Chandrashekhar, Asif Khan

An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays

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Shahab Mollah

ORCID

, Mikhail Gaevski

ORCID

, Kamal Hussain

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, Abdullah Mamun

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, Mvs Chandrashekhar, Grigory Simin, Asif Khan

ORCID

Temperature characteristics of high-current UWBG enhancement and depletion mode AlGaN-channel MOSHFETs

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Mikhail Gaevski, Shahab Mollah

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, Kamal Hussain, Joshua Letton, Abdullah Mamun

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, Mohi Uddin Jewel, Mvs Chandrashekhar, Grigory Simin, Asif Khan

Ultrawide bandgap Al _x Ga_1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm⁻¹

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This paper was not found in any repository, but could be made available legally by the author.

Shahab Mollah

ORCID

, Kamal Hussain, Richard Floyd, Abdullah Mamun

ORCID

, Mikhail Gaevski, Mvs Chandrashekhar, Iftikhar Ahmad, Grigory Simin, Virginia Wheeler, Charles Eddy, Asif Khan

High‐Temperature Operation of Al_xGa_1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides

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2019 Shahab Mollah

ORCID

, Mikhail Gaevski, Mvs Chandrashekhar, Xuhong Hu, Virginia Wheeler, Kamal Hussain, Abdullah Mamun

ORCID

, Richard Floyd, Iftikhar Ahmad, Grigory Simin, Charles Eddy, Asif Khan

Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric

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Shahab Mollah

ORCID

, Mikhail Gaevski, Kamal Hussain, Abdullah Mamun

ORCID

, Richard Floyd, Xuhong Hu, M. V. S. Chandrashekhar, Grigory Simin, Asif Khan

Current collapse in high-Al channel AlGaN HFETs

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