Sorin Cristoloveanu
0000-0002-3576-5586
3 papers found
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Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation
Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs
Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel
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