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Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates
Download from www.researchgate.netCapacitance transient study of a bistable deep level in e − -irradiated n-type 4H–SiC
Download from www.researchgate.netLow Temperature CVD of Thin, Amorphous Boron-Carbon Films for Neutron Detectors
Download from liu.diva-portal.orgOn the effect of water and oxygen in chemical vapor deposition of boron nitride
Download from www.researchgate.netGrowth of High Quality Epitaxial Rhombohedral Boron Nitride
Download from www.researchgate.netOptical identification and electronic configuration of tungsten in 4H- and 6H-SiC
Download from www.researchgate.netThe origin of a peak in the reststrahlen region of SiC
Download from www.researchgate.netSiC epitaxy growth using chloride-based CVD
Download from www.researchgate.netEpitaxial CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer
Download from liu.diva-portal.orgAnnealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC
Download from www.researchgate.netDeep levels in tungsten doped n-type 3C–SiC
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