P. C. Feijoo
www.mendeley.com
0000-0002-7653-4573
Universitat Autònoma de Barcelona
7 papers found
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Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors
An Extraction Method for Mobility Degradation and Contact Resistance of Graphene Transistors
Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications
Experimental Observation and Modeling of the Impact of Traps on Static and Analog/HF Performance of Graphene Transistors
2D pn junctions driven out-of-equilibrium
Radio Frequency Performance Projection and Stability Tradeoff of h-BN Encapsulated Graphene Field-Effect Transistors
Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor
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