Papers authored by Gwénolé Jacopin
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Richard H. Friend,
Shaik Mohammed Zakeeruddin,
Michael Grazel,
Michael Grätzel
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A. Dussaigne,
N. Grandjean,
B. Deveaud,
G. Jacopin
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Excitonic Diffusion in InGaN/GaN Core-Shell Nanowires
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Egidijus Kamarauskas,
Samrana Kazim,
Shahzada Ahmad,
Michael Graetzel,
Michael Grätzel,
Mohammad Khaja Nazeeruddin
Triazatruxene-Based Hole Transporting Materials for Highly Efficient Perovskite Solar Cells
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Vladimir Neplokh,
Ludovic Largeau,
François H. Julien ,
Olga Kryliouk,
Maria Tchernycheva
Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatment
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Xuewen Fu,
Jean-Daniel Ganière,
Dapeng Yu,
Benoît Deveaud
Exciton hopping probed by picosecond time-resolved cathodoluminescence
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Ludovic Largeau,
Rafal Ciechonski,
Giuliano Vescovi,
Olga Kryliouk
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Pierre Lavenus,
Lorenzo Rigutti,
Hezhi Zhang,
Yacine Halioua,
François H. Julien ,
Joel Eymery ,
Christophe Durand
Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors
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Mehran Shahmohammadi,
François H. Julien ,
Rafal Ciechonski,
Giuliano Vescovi,
Olga Kryliouk
InGaN/GaN Core-Shell Single Nanowire Light Emitting Diodes with Graphene-Based P-Contact
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Mehran Shahmohammadi,
Jean-Daniel Ganiere,
Benoit Deveaud
Hopping process of bound excitons under an energy gradient
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Mehran Shahmohammadi,
Ren Liu,
Malik Benameur,
Jean-Daniel Ganière,
Ji Feng,
Wanlin Guo,
Zhi-Min Liao ,
Benoit Deveaud,
Dapeng Yu
Exciton drift in semiconductors under uniform strain gradients: application to bent ZnO microwires
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Georg Rossbach,
Jacques Levrat,
Eric Feltin,
Jean-François Carlin,
Jean-Daniel Ganiere,
Raphaël Butté ,
Nicolas Grandjean,
Benoît Deveaud
Biexcitonic molecules survive excitons at the Mott transition
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Mehran Shahmohammadi,
Jean-François Carlin,
Jean-Daniel Ganiere,
Raphaël Butte ,
Benoit Deveaud,
Nicolas Grandjean
High-temperature Mott transition in wide-band-gap semiconductor quantum wells
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P. Lavenus,
F. H. Julien ,
A. Yu Egorov,
A. Yu Egorov,
J. Zhang,
T. Pauporte,
M. Tchernycheva
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L. Rigutti,
J. Teubert,
F. H. Julien,
F. Furtmayr,
Ph Komninou ,
Th Kehagias ,
M. Eickhoff ,
M. Tchernycheva
Optical properties of GaN-based nanowires containing a single Al0.14Ga0.86N/GaN quantum disc
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L. Rigutti,
S. Bellei,
P. Lavenus,
F. H. Julien ,
A. V. Davydov,
D. Tsvetkov,
K. A. Bertness,
N. A. Sanford,
J. B. Schlager,
M. Tchernycheva
Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires
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