Hangbing Lv
0000-0003-4727-9224
15 papers found
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Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode
High-Performance Metal-Organic Chemical Vapor Deposition Grown $ɛ$ -Ga2O3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes
Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System
Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films
A Self-Rectifying Resistive Switching Device Based on HfO2/TaO $_{{x}}$ Bilayer Structure
Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory
Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films
Unveiling the Switching Mechanism of a TaOx/HfO2 Self-Selective Cell by Probing the Trap Profiles With RTN Measurements
Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application
The Impact of RTN Signal on Array Level Resistance Fluctuation of Resistive Random Access Memory
Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule
An Artificial Neuron Based on a Threshold Switching Memristor
A Compact Model for Drift and Diffusion Memristor Applied in Neuron Circuits Design
Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM
Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator
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