Dongxue Liang
0000-0003-4827-4935
3 papers found
Refreshing results…
Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate
Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis(trifluoromethane) sulfonamide treatment
Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors
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