Junxia Shi - Dissemin

All papers authored by Junxia Shi

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2018 Parijat Sengupta, Yu Wen, Junxia Shi

Spin-dependent magneto-thermopower of narrow-gap lead chalcogenide quantum wells

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Parijat Sengupta

, Saptarshi Das

, Junxia Shi

The electrothermal conductance and heat capacity of black phosphorus

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Parijat Sengupta

, Dimitris Pavlidis, Junxia Shi

Optically adjustable valley Hall current in single-layer transition metal dichalcogenides

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2017 Xiaowei Wang, Junxia Shi

Strain Effects on the Interaction Between NO2 and the Mo-Edge of the MoS2 Zigzag Nanoribbon

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Chenjie Tang, Koon Hoo Teo, Junxia Shi

Simulation of GaN HEMT with wide-linear-range transconductance

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Parijat Sengupta, Masahiko Matsubara, Enrico Bellotti, Junxia Shi

Intrinsic optical conductivity of a ${{\rm{C}}}_{2v}$ symmetric topological insulator

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Albert Colon, Liliana Stan, Ralu Divan, Junxia Shi

Incorporation of Al or Hf in atomic layer deposition TiO2 for ternary dielectric gate insulation of InAlN/GaN and AlGaN/GaN metal-insulator-semiconductor-heterojunction structure

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2016 Albert Colon, Liliana Stan, Ralu Divan, Junxia Shi

Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

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Chenjie Tang, Yi Lan, Mitra Dutta, Michael A. Stroscio, Junxia Shi

AlGaAs/GaAs Triple Quantum Well Photodetector at $5~μ \text{m}$ Wavelength—A Simulation Study

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2015 Yi Lan, Chenjie Tang, Lucy Shi, Junxia Shi

, Mitra Dutta, Michael Stroscio

Phononic Properties for Enhanced Signal-to-Noise Photodetector

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Chenjie Tang, Junxia Shi

Influence of delta doping on intersubband transition and absorption in AlGaN/GaN step quantum wells for terahertz applications

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2014 Chenjie Tang, Junxia Shi

Effects of passivation on breakdown voltage and leakage current of normally-off InAlN/GaN MISHFETs—a simulation study

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Albert Colón, Junxia Shi

High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors

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Yi Lan, Nanzhu Zhang, Junxia Lucy Shi

, M. Dutta, M. A. Stroscio

Enhanced signal-to-noise in photodetectors due to interface phonon-assisted transitions

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Sathees Kannan Selvaraj, Albert Colon, Jorge Iván Rossero, Junxia Shi

, Christos G. Takoudis

Effect of Using Ethanol as the Oxygen Source on the Growth and Dielectric Behavior of Atomic Layer Deposited Hafnium Oxide

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2013 Chenjie Tang, Junxia Shi

Influence of acceptor-like traps in the buffer on current collapse and leakage of E-mode AlGaN/GaN MISHFETs

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2011 Junxia Shi

, Lester F. Eastman

Correlation Between AlGaN/GaN MISHFET Performance and $ \hbox{HfO}_{2}$ Insulation Layer Quality

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S. Schoche, S. Schöche, Junxia Shi

, A. Boosalis, P. Kuhne, C. M. Herzinger, J. A. Woollam, W. J. Schaff, L. F. Eastman, M. Schubert

, T. Hofmann

Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures

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Tiju Thomas, Xiaomei Guo, Junxia Shi

, Lori A. Lepak, M. V. S. Chandrashekhar, Kewen Li, Francis J. DiSalvo, Michael G. Spencer

Gallium nitride powders: Mechanism of ammonothermal synthesis, ball-mill assisted rare earth doping and uniform electrophoretic deposition

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2009 Xiaobin Xin, Junxia Shi

, Linlin Liu, J. Edwards, K. Swaminathan, M. Pabisz, M. Murphy, L. F. Eastman, M. Pophristic

Demonstration of Low-Leakage-Current Low-On-Resistance 600-V 5.5-A GaN/AlGaN HEMT

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All papers authored by Junxia Shi