Koichi Fukuda
0000-0002-3148-6010
National Institute of Advanced Industrial Science and Technology
78 papers found
Refreshing results…
Closed-form analytical model of static noise margin for ultra-low voltage eight-transistor tunnel FET static random access memory
Steep subthreshold swing and energy efficiency in MOSFFETs utilizing nonlinear gate dielectric insulators
Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors
Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors
Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors
Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors
Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap
Study of gate leakage current paths in p-channel tunnel field-effect transistor by current separation measurement and device simulation
Spatial variation of the work function in nano-crystalline TiN films measured by dual-mode scanning tunneling microscopy
Design guidelines to achieve minimum energy operation for ultra low voltage tunneling FET logic circuits
Understanding of BTI for Tunnel FETs
A Moving Mesh Method for Device Simulation
PBTI for N-type Tunnel FinFETs
Modeling of Parallel Electric Field Tunnel FETs
Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology
Accurate prediction of PBTI lifetime for N-type fin-channel tunnel FETs
Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model
Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration
Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance
Three-dimensional simulation of scanning tunneling microscopy for semiconductor carrier and impurity profiling
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