Koichi Fukuda - Dissemin

All papers authored by Koichi Fukuda

This paper is made freely available by the publisher.

2023 Junichi Hattori

, Koichi Fukuda

, Tsutomu Ikegami

, Wen Hsin Chang

Temperature rise effects on static characteristics of complementary FETs with Si and Ge nanosheets

Download from iopscience.iop.org

This paper was not found in any repository, but could be made available legally by the author.

2018 Junichi Hattori, Koichi Fukuda

, Tsutomu Ikegami, Hiroyuki Ota, Shinji Migita, Hidehiro Asai, Akira Toriumi

Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

Upload

Koichi Fukuda

, Hidehiro Asai, Junichi Hattori, Takahiro Mori, Yukinori Morita, Wataru Mizubayashi, Meishoku Masahara, Shinji Migita, Hiroyuki Ota, Kazuhiro Endo, Takashi Matsukawa

Simulation study of short-channel effects of tunnel field-effect transistors

Download from iopscience.iop.org

Hiroyuki Ota

, Junichi Hattori, Hidehiro Asai, Tsutomu Ikegami, Koichi Fukuda

, Shinji Migita, Akira Toriumi

Design of steep-slope negative-capacitance FinFETs for dense integration: Importance of appropriate ferroelectric capacitance and short-channel effects

Download from iopscience.iop.org

Koichi Fukuda

, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu, Tamotsu Hashizume

A transient simulation approach to obtaining capacitance–voltage characteristics of GaN MOS capacitors with deep-level traps

Download from iopscience.iop.org

2017 Hiroyuki Ota, Koichi Fukuda

, Tsutomu Ikegami, Junichi Hattori, Hidehiro Asai, Shinji Migita, Akira Toriumi, Ieee

Perspective of negative capacitance FinFETs investigated by transient TCAD simulation

Upload

Koichi Fukuda

, Junichi Hattori, Hidehiro Asai, Mitsuaki Shimizu, Tamotsu Hashizume, Ieee

Simulation of GaN MOS capacitance with frequency dispersion and hysteresis

Upload

Yukinori Morita, Koichi Fukuda

, Yongxun Liu, Takahiro Mori, Wataru Mizubayashi, Shin-Ichi O’uchi, Hiroshi Fuketa, Shintaro Otsuka, Shinji Migita, Meishoku Masahara, Kazuhiko Endo, Hiroyuki Ota, Takashi Matsukawa

Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

Download from iopscience.iop.org

Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda

, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O’uchi, Junichi Tsukada, Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo

Bias temperature instability in tunnel field-effect transistors

Download from iopscience.iop.org

Hidehiro Asai, Koichi Fukuda

, Junichi Hattori, Hanpei Koike, Noriyuki Miyata, Mitsue Takahashi, Shigeki Sakai

Compact model of ferroelectric-gate field-effect transistor for circuit simulation based on multidomain Landau–Kalathnikov theory

Download from iopscience.iop.org

Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda

, Akira Toriumi

Structural advantages of silicon-on-insulator FETs over FinFETs in steep subthreshold-swing operation in ferroelectric-gate FETs

Upload

Junichi Hattori, Koichi Fukuda

, Toshifumi Irisawa, Hiroyuki Ota, Tatsuro Maeda

Interlayer coupling effect on the performance of monolithic three-dimensional inverters and its dependence on the interlayer dielectric thickness

Download from iopscience.iop.org

Koichi Fukuda

, Takahiro Mori, Hidehiro Asai, Junichi Hattori, Wataru Mizubayashi, Yukinori Morita, Hiroshi Fuketa, Shinji Migita, Hiroyuki Ota, Meishoku Masahara, Kazuhiko Endo, Takashi Matsukawa

On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors

Upload

Takahiro Mori, Shinji Migita, Koichi Fukuda

, Hidehiro Asai, Yukinori Morita, Wataru Mizubayashi, Yongxun Liu, Shin-Ichi O’uchi, Hiroshi Fuketa, Shintaro Otsuka, Tetsuji Yasuda, Meishoku Masahara, Hiroyuki Ota, Takashi Matsukawa

Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability

Download from iopscience.iop.org

2016 Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda

, Shinji Migita, Akira Toriumi, Ieee

Fully coupled 3-D device simulation of negative capacitance FinFETs for sub 10 nm integration

Upload

T. Mori, H. Asai, J. Hattori, K. Fukuda

, S. Otsuka, Y. Morita, S. O'uchi, H. Fuketa, S. Migita, W. Mizubayashi, H. Ota, T. Matsukawa, Ieee

Demonstrating performance improvement of complementary TFET circuits by Ion enhancement based on isoelectronic trap technology

Upload

This paper was not found in any repository; the policy of its publisher is unknown or unclear.

Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda

, Akira Toriumi, Ieee

Design and simulation of steep-slope silicon-on-insulator FETs using negative capacitance: Impact of buried oxide thickness and remnant polarization

Upload

Wenbo Lin, Shinjiro Iwata, Koichi Fukuda

, Yasuyuki Miyamoto

Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration

Upload

Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda

, Akira Toriumi

Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance

Upload

Yukinori Morita, Koichi Fukuda

, Takahiro Mori, Wataru Mizubayashi, Shinji Migita, Kazuhiko Endo, Shin-Ichi O’uchi, Yongxun Liu, Meishoku Masahara, Takashi Matsukawa, Hiroyuki Ota

Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

Upload

Missing publications? Search for publications with a matching author name.

Researcher

Statistics

Refine

All papers authored by Koichi Fukuda