Farid Medjdoub - Dissemin

Papers authored by Farid Medjdoub

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2018 R. Kabouche, J. Derluyn, R. Pusche, S. Degroote, M. Germain, R. Pecheux, E. Okada, M. Zegaoui, F. Medjdoub

Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications

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R. Pecheux, R. Kabouche, E. Okada, M. Zegaoui, F. Medjdoub

C-doped AlN/GaN HEMTs for High efficiency mmW applications

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Carlo De Santi, Matteo Meneghini

, Alessandro Caria

, Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub

, Enrico Zanoni, Gaudenzio Meneghesso

Degradation processes and origin in InGaN-based high-power photodetectors

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This paper is made freely available by the publisher.

Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

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Carlo De Santi

, Matteo Meneghini

, Alessandro Caria

, Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub

, Boris Kalinic, Tiziana Cesca

, Gaudenzio Meneghesso, Enrico Zanoni

GaN-Based Laser Wireless Power Transfer System

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This paper was not found in any repository; the policy of its publisher is unknown or unclear.

Mohamed Bouslama, Ahmad Al Hajjar, Raphael Sommet, Farid Medjdoub

, Jean-Christophe Nallatamby

Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4$\times$ 50$μ$m on Silicon Substrate

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Romain Pécheux, Guillaume Ducournau, Riad Kabouche, Etienne Okada, Christian Mondolot, Farid Medjdoub

Development of Setup for On-Wafer Pulse-To-Pulse Stability Characterization of Gan Hemt Transistor in Ku-Band

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R. Pecheux, R. Kabouche, M. Zegaoui, J. Chen, O. Kordina, F. Medjdoub

GaN-based transistors using buffer-free heterostructures for next generation RF devices

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Mohamed Bouslama, Ahmad Al Hajjar, Raphael Sommet, Farid Medjdoub

, Jean-Christophe Nallatamby

Characterization and Electrical Modeling Including Trapping Effects of A1n/GaN HEMT 4⨯ 50$μ$mon Silicon Substrate

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2017 Stephanie Rennesson

, Mathieu Leroux, Mohamed Al Khalfioui, Maud Nemoz, Sébastien Chenot, Jean Massies, Ludovic Largeau

, Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub

, Fabrice Semond

Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3 -MBE

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R. Pecheux, R. Kabouche, E. Dogmus, A. Linge, E. Okada, M. Zegaoui, F. Medjdoub

Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness

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Carlo De Santi, Matteo Meneghini

, A. Caria

, E. Dogmus, M. Zegaoui, F. Medjdoub

, Enrico Zanoni, Gaudenzio Meneghesso

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation

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Piero Gamarra, Cedric Lacam, Maurice Tordjman, Farid Medjdoub

, Marie-Antoinette di Forte-Poisson

In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs

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R. Kabouche, E. Okada, E. Dogmus, A. Linge, M. Zegaoui, F. Medjdoub

Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band

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Ahmad Al Hajjar, Julien Couvidat, Jean-Christophe Nallatamby, Raymond Quéré, Farid Medjdoub

Caractérisation et modélisation non-linéaire du HEMT AlN/GaN sur substrat silicium et validation par mesure Load-Pull

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Ezgi Dogmus, Riad Kabouche, Astrid Linge, Etienne Okada, Malek Zegaoui, Farid Medjdoub

High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs

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Ezgi Dogmus, Farid Medjdoub

7 InGaN-Based Solar Cells

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Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, Farid Medjdoub

Impact of gate--drain spacing on low-frequency noise performance ofin situSiN passivated InAlGaN/GaN MIS-HEMTs

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2016 Georges Pavlidis, David Mele

, Ting Cheng, Farid Medjdoub

, Samuel Graham

The thermal effects of substrate removal on GaN HEMTs using Raman Thermometry

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Nandha Kumar Subramani, Amit Kumar Sahoo, Jean-Christophe Nallatamby, Raphael Sommet, Nathalie Rolland, Farid Medjdoub

, Raymond Quere

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

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Papers authored by Farid Medjdoub