Farid Medjdoub - Dissemin

All papers authored by Farid Medjdoub

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2020 Alessandro Caria

, Carlo De Santi

, Ezgi Dogmus, Farid Medjdoub

, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini

Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors

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Sven Besendörfer

, Elke Meissner

, Farid Medjdoub

, Joff Derluyn

, Jochen Friedrich

, Tobias Erlbacher

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

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Alaleh Tajalli, Matteo Meneghini

, Sven Besendörfer

, Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Elke Meissner

, Enrico Zanoni, Farid Medjdoub

, Gaudenzio Meneghesso

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

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Alaleh Tajalli, Matteo Borga, Matteo Meneghini

, Carlo De Santi

, Davide Benazzi, Sven Besendörfer

, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Riad Kabouche, Idriss Abid, Elke Meissner, Enrico Zanoni, Farid Medjdoub

and 1 other authors

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

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This paper was not found in any repository, but could be made available legally by the author.

S. Besendörfer

, E. Meissner

, A. Tajalli

, M. Meneghini

, J. A. Freitas, J. Derluyn

, F. Medjdoub

, G. Meneghesso

, J. Friedrich

, T. Erlbacher

Vertical breakdown of GaN on Si due to V-pits

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2019 M. Rzin, B. Guillet

, L. Mechin

, L. Méchin, P. Gamarra, C. Lacam, F. Medjdoub

, J.-M. Routoure

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

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Jun Lu, Jr-Tai Chen

, Martin Dahlqvist, Riad Kabouche, Farid Medjdoub

, Johanna Rosen, Olof Kordina, Lars Hultman

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

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Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, Farid Medjdoub

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

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Georges Pavlidis

, Samuel H. Kim, Idriss Abid, Malek Zegaoui, Farid Medjdoub

, Samuel Graham

The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

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Riad Kabouche, James W. Pomeroy, Romain Pecheux, Kathia Harrouche, Etienne Okada, Farid Medjdoub

, Joff Derluyn, Stefan Degroote, Marianne Germain, Filip Gucmann, Callum Middleton, Martin Kuball

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

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Riad Kabouche

, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Farid Medjdoub

Low on-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures

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This paper was not found in any repository; the policy of its publisher is unknown or unclear.

R. Kabouche, I. Abid, M. Zegaoui, K. Cheng, F. Medjdoub

Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

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A. Tajalli, M. Meneghini, R. Kabouche, I. Abid, M. Zegaoui, R. Püsche, J. Derluyn, S. Degroote, M. Germain, F. Medjdoub

Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V

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Kathia Harrouche

, Riad Kabouche

, Etienne Okada

, Farid Medjdoub

High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation

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M. Borga, M. Meneghini, D. Benazzi, E. Canato, R. Püsche, J. Derluyn, I. Abid, F. Medjdoub

, G. Meneghesso, E. Zanoni

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

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M. Borga, M. Meneghini, D. Benazzi, R. Püsche, J. Derluyn, I. Abid, F. Medjdoub

, G. Meneghesso, E. Zanoni

GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current

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M. Rzin, M. Meneghini, F. Rampazzo, V. Gao Zhan, C. De Santi, R. Kabouche, M. Zegaoui, F. Medjdoub

, G. Meneghesso, E. Zanoni

Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

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K. Harrouche, R. Kabouche, M. Zegaoui, F. Medjdoub

Scaling of AlN/GaN HEMT for millimeter-wave power applications

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I. Abid, R. Kabouche, M. Zegaoui, C. Bougerol, R. Comyn, Y. Cordier, F. Medjdoub

AlGaN/GaN High Electron Mobility Transistors with Ultra-Wide Bandgap AlN buffer

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2018 Carlo De Santi

, Alessandro Caria

, Nicola Renso, Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub

, Gaudenzio Meneghesso

, Enrico Zanoni

, Matteo Meneghini

Evidence of optically induced degradation in gallium nitride optoelectronic devices

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All papers authored by Farid Medjdoub