Dae-Woo Jeon
0000-0002-4896-6862
3 papers found
Refreshing results…
Thermal analysis of an α -Ga2O3 MOSFET using micro-Raman spectroscopy
Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C
Effects of nanoepitaxial lateral overgrowth on growth of α-Ga2O3 by halide vapor phase epitaxy
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