Enrique Miranda - Dissemin

All papers authored by Enrique Miranda

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2019 Fernando Leonel Aguirre

, Alberto Rodriguez-Fernandez

, Sebastian Matias Pazos

, Jordi Sune

, Enrique Miranda

, Felix Palumbo

Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

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E. Miranda

, J. Muñoz-Gorriz, J. Suñe, K. Fröhlich

SPICE model for the current-voltage characteristic of resistive switching devices including the snapback effect

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Enrique A. Miranda

, Karol Frohlich

Compact Modeling of Complementary Resistive Switching Devices Using Memdiodes

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J. Munoz-Gorriz

, D. Blachier, G. Reimbold, F. Campabadal

, J. Sune, S. Monaghan

, K. Cherkaoui

, P. K. Hurley, E. Miranda

Assessing the Correlation Between Location and Size of Catastrophic Breakdown Events in High-K MIM Capacitors

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2018 A. Rodriguez-Fernandez

, C. Cagli

, J. Sune, E. Miranda

Switching Voltage and Time Statistics of Filamentary Conductive Paths in HfO2-Based ReRAM Devices

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Arthur Van Camp

, Enrique Miranda

, Gert de Cooman

Natural Extension of Choice Functions

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Ignacio Montes

, Enrique Miranda

, Paolo Vicig

Approximations of Coherent Lower Probabilities by 2-monotone Capacities

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2017 J. Muñoz-Gorriz

, S. Monaghan, K. Cherkaoui

, J. Suñé, P. K. Hurley, E. Miranda

Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures

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German Agustin Patterson

, J. Sune, E. Miranda

Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications

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German A. Patterson

, Jordi Suñé, Enrique Miranda

SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions

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Marco A. Villena, Juan B. Roldán, Francisco Jiménez-Molinos, Enrique Miranda

, Jordi Suñé, Mario Lanza

${ SIM}^2{ RRAM}$ S I M 2 R R A M : a physical model for RRAM devices simulation

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Meiyun Zhang, Shibing Long, Jiao Teng, Qi Liu

, Hangbing Lv

, Enrique Miranda

, Jordi Suñé

, Ming Liu, Yu Li

Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator

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A. Rodriguez-Fernandez

, C. Cagli, L. Perniola, J. Suñé, E. Miranda

Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis

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E. Miranda

, J. Sune, C. Pan, M. Villena, N. Xiao, M. Lanza

Equivalent circuit model for the electron transport in 2D resistive switching material systems

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S. Duenas

, H. Castan, H. Garcia, Oscar G. Ossorio, Luis A. Dominguez, E. Miranda

Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices

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Alberto Rodriguez-Fernandez

, Samuel Aldana, Francesca Campabadal, Jordi Sune, Enrique Miranda

, Francisco Jimenez-Molinos, Juan Bautista Roldan, Mireia Bargallo Gonzalez

Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices

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Juan Carlos Gonzalez-Rosillo

, Rafael Ortega-Hernandez, Júlia Jareño-Cerulla, Enrique Miranda

, Jordi Suñe, Xavier Granados, Xavier Obradors, Anna Palau, Teresa Puig

Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition

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A. Rodriguez-Fernandez

, C. Cagli, L. Perniola, J. Suñé, E. Miranda

Effect of the voltage ramp rate on the set and reset voltages of ReRAM devices

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J. Muñoz-Gorriz, S. Monaghan, K. Cherkaoui, J. Suñé, P. K. Hurley, E. Miranda

Spatial analysis of failure sites in large area MIM capacitors using wavelets

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S. Dueñas

, H. Castán, H. García, E. Miranda

, M. B. Gonzalez, F. Campabadal

Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices

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All papers authored by Enrique Miranda