Michel Houssa - Dissemin

Papers authored by Michel Houssa

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2017 Alessandro Molle, Joshua Goldberger, Michel Houssa

, Yong Xu, Shou-Cheng Zhang, Deji Akinwande

Buckled two-dimensional Xene sheets

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S. Iacovo, A. Stesmans, M. Houssa

, V. V. Afanas’ev

The lead acceptor in p-type natural 2H-polytype MoS2 crystals evidenced by electron paramagnetic resonance

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K. Iordanidou

, J. Kioseoglou, V. V. Afanas’ev, A. Stesmans, M. Houssa

Intrinsic point defects in buckled and puckered arsenene: a first-principles study

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2016 H.-Y. Chou, Éamon O'Connor, E. O'Connor, A. O'Mahony

, Ian M. Povey

, K. Hurley Paul, Lin Dong, P. D. Ye, V. V. Afanas'ev

, M. Houssa

, A. Stesmans

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

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A. Belmonte, A. Fantini, A. Redolfi, M. Houssa

, M. Jurczak, L. Goux

Impact of temperature and programming method on the data retention of Cu/Al 2 O 3 -based conductive-bridge RAM operated at low-current (10 μA)

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K. Iordanidou, M. Houssa

, G. Pourtois, V. V. Afanas'ev, A. Stesmans

Oxygen and hydroxyl adsorption on MS2(M = Mo, W, Hf) monolayers: a first-principles molecular dynamics study

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Bas van den Broek, Michel Houssa

, Augustin Lu

, Geoffrey Pourtois, Valery Afanas’ev, Andre Stesmans

Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport

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Jolien Debehets, Sérgio M. C. Miranda, Pía Homm

, Michel Houssa

, Marc Seefeldt, Jean-Pierre Locquet, Jin Won Seo

Auger electron spectroscopy study of semiconductor surfaces: Effect of cleaning in inert atmosphere

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F. Cerbu

, O. Madia, Dv V. Andreev, S. Fadida, M. Eizenberg, L. Breuil, Jg G. Lisoni, Ja A. Kittl

, J. Strand, Al L. Shluger, Vv V. Afanas'ev

, M. Houssa

, A. Stesmans

Intrinsic electron traps in atomic-layer deposited HfO2 insulators

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This paper was not found in any repository; the policy of its publisher is unknown or unclear.

Michel Houssa

, Afanas, Valery Afanas’ev, André Stesmans

Structural, Electronic and Transport Properties of Silicene and Germanene

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M. Houssa

, K. Iordanidou, V. V. Afanas’ev, A. Stesmans

First-principles investigation of defects at GaAs/oxide interfaces

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Anh Khoa Augustin Lu

, Geoffrey Pourtois, Tarun Agarwal, Aryan Afzalian, Iuliana P. Radu, Michel Houssa

Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

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Michel Houssa

, Bas van den Broek, Konstantina Iordanidou, Anh Khoa Augustin Lu

, Geoffrey Pourtois, Jean-Pierre Locquet, Valery Afanas’ev, André Stesmans

Topological to trivial insulating phase transition in stanene

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F. Cerbu, D. V. Andreev, J. Lisoni, L. Breuil, V. V. Afanas'ev, A. Stesmans, M. Houssa

Electron energy distribution in Si/TiN and Si/Ru hybrid floating gates with hafnium oxide based insulators for charge trapping memory devices

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K. Iordanidou, M. Houssa

, B. van den Broek, G. Pourtois, V. V. Afanas’ev, A. Stesmans

Impact of point defects on the electronic and transport properties of silicene nanoribbons

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B. van den Broek, M. Houssa

, K. Iordanidou, G. Pourtois, V. V. Afanas’ev, A. Stesmans

Functional silicene and stanene nanoribbons compared to graphene: electronic structure and transport

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K. Iordanidou, M. Houssa

, G. Pourtois, V. V. Afanas'ev, A. Stesmans

Impact of Point Defects and Oxidation on the Electronic Properties of HfS2Monolayers

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M. Houssa

, A. Dimoulas

, A. Molle

Preface

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Michel Houssa

, André Stesmans, Valeri V. Afanas’ev

Interaction Between Silicene and Non-metallic Surfaces

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M. Houssa

, A. Dimoulas

, A. Molle

2D Materials for Nanoelectronics

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Papers authored by Michel Houssa