Xuelin Yang
0000-0001-5152-5075
Peking University
9 papers found
Refreshing results…
Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates
AlGaN/GaN pressure sensor with a Wheatstone bridge structure
High-electron-mobility InN epilayers grown on silicon substrate
Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates
Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs
Temperature-dependent polarization characteristics in Al0.25Ga0.75N/AlN/GaN heterostructure
Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements
Hysteresis phenomena of the two dimensional electron gas density in lattice-matched InAlN/GaN heterostructures
O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors
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