All papers authored by Tobias F. Wietler
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Paul Fassl ,
Bahram Abdollahi Nejand,
Tobias Abzieher ,
Moritz Schultes,
Erik Ahlswede,
Philip Jackson,
Michael Powalla,
Sören Schäfer,
Michael Rienäcker ,
Tobias Wietler ,
Robby Peibst ,
Uli Lemmer,
Bryce S. Richards
and 1 other authors
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Robby Peibst,
Tobias Ohrdes,
Bianca Lim,
Jan Krugener,
Tobias Wietler ,
Rolf Brendel
Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells
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Robby Peibst,
Tobias Ohrdes,
Bianca Lim,
Jan Krügener,
Eberhard Bugiel,
Tobias Wietler ,
Rolf Brendel
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J. Schmidt,
D. Tetzlaff,
E. Bugiel
Surfactant-mediated epitaxy of silicon germanium films on silicon (001) substrates
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E. Bugiel,
H. J. Osten
Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy
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Eddy P. Rugeramigabo,
Eberhard Bugiel,
Enrique Garralaga Rojas
Relaxed Germanium on Porous Silicon Substrates
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E. Bugiel,
H. J. Osten
Carbon-mediated growth of thin, fully relaxed germanium films on silicon
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A. Laha,
H. J. Osten
Epitaxial growth and thermal stability of silicon layers on crystalline gadolinium oxide
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J. Krügener,
A. Laha,
H. J. Osten
Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy
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E. P. Rugeramigabo,
E. Bugiel,
K. R. Hofmann,
Marília Caldas,
Nelson Studart
Influence Of Sb Induced Surface Faceting On Structural Properties Of Relaxed Ge Films On Si(001)
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A. Laha,
E. Bugiel,
M. Czernohorsky,
R. Dargis,
A. Fissel,
H. J. Osten
Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(001) substrates
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A. Laha,
H. J. Osten
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E. Bugiel,
K. R. Hofmann
Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon
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