Xiangshui Miao
0000-0002-5621-5495
4 papers found
Refreshing results…
Logic-in-Memory Based on Majority Gates With Voltage-Gated SOT-MRAM Crossbar Arrays
In-Memory Wallace Tree Multipliers Based on Majority Gates Within Voltage-Gated SOT-MRAM Crossbar Arrays
Ultra-Low Program Current and Multilevel Phase Change Memory for High-Density Storage Achieved by a Low-Current SET Pre-Operation
Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films
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