Ramya Yeluri
scholar.google.com
0000-0002-7860-968X
Intel Corp Hillsboro
3 papers found
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On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors
Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition
Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction
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