Asif Khan
0000-0002-4542-6553
9 papers found
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High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V
Temperature characteristics of high-current UWBG enhancement and depletion mode AlGaN-channel MOSHFETs
BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
Publisher's Note: “Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence” [Appl. Phys. Lett. 115, 213502 (2019)]
Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence
Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors
High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor
High temperature operation of n-AlGaN channel metal semiconductor field effect transistors on low-defect AlN templates
Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity
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