Papers authored by Luysberg
Refreshing results…
2003
L. Houben 
,
M. Luysberg ,
R. Carius
,
M. Luysberg ,
R. Carius
Microtwinning in microcrystalline silicon and its effect on grain-size measurements
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H.-J. Herzog,
T. Hackbarth,
U. Seiler,
U. Konig,
M. Luysberg ,
B. Hollander,
Siegfried Mantl
,
B. Hollander,
Siegfried Mantl
Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation
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2001
P. Specht,
M. J. Cich,
R. Zhao,
J. Gebauer,
M. Luysberg ,
E. R. Weber
,
E. R. Weber
Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs:Be
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T. E. M. Staab,
Risto M. Nieminen,
J. Gebauer,
R. Krause Rehberg,
M. Luysberg ,
M. Haugk,
T.-H. Frauenheim
,
M. Haugk,
T.-H. Frauenheim
Do Arsenic Interstitials Really Exist in As-Rich GaAs?
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B. Holländer,
S. Mantl,
St. Lenk,
H. Trinkaus,
D. Kirch,
M. Luysberg ,
T.-H. Hackbarth,
H.-J. Herzog,
P. F. P. Fichtner
,
T.-H. Hackbarth,
H.-J. Herzog,
P. F. P. Fichtner
Strain Relaxation of He+ Implanted, Pseudomorphic Si1−xGex Layers on Si(100)
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2000
J. Gebauer,
F. Börner,
R. Krause Rehberg,
T. E. M. Staab,
W. Bauer Kugelmann,
G. Kögel,
G. Kögel,
W. Triftshäuser,
P. Specht,
R. C. Lutz,
E. R. Weber,
M. Luysberg
Defect identification in GaAs grown at low temperatures by positron annihilation
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1999
M. Haiml,
U. Siegner,
F. Morier Genoud,
U. Keller,
M. Luysberg ,
R. C. Lutz,
P. Specht,
E. R. Weber
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,
R. C. Lutz,
P. Specht,
E. R. Weber
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