Xiao Gong
0000-0002-9243-1937
14 papers found
Refreshing results…
Hydrogen-Related Instability of IGZO Field-Effect Transistors
Ferroelectric compute-in-memory annealer for combinatorial optimization problems
BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs—Part I: Experimental Results With Boosted Memory Window
Investigation of Charge Trapping Aggravation Induced by Antiferroelectric Switching With a Unified Ferroelectric and Antiferroelectric Model
Multibit Content Addressable Memory Design and Optimization Based on 3-D nand-Compatible IGZO Flash
Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical Understanding
Low-Power and Scalable BEOL-Compatible IGZO TFT eDRAM-Based Charge-Domain Computing
Probabilistic-Bits Based on Ferroelectric Field-Effect Transistors for Probabilistic Computing
A Novel Array Programming Scheme for Large Matrix Processing in Flash-Based Computing-in-Memory (CIM) With Ultrahigh Bit Density
Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory
Fast Fourier Transform (FFT) Using Flash Arrays for Noise Signal Processing
Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics
Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width
MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS
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