Ulrike Grossner
0000-0002-2495-8550
6 papers found
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Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
Muon Interaction with Negative- U and High-Spin-State Defects: Differentiating Between C and Si Vacancies in 4H - SiC
Heavy-Ion Microbeam Studies of Single Event Leakage Current Mechanism in SiC VD-MOSFETs
Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES
1950°C Annealing of Al<sup>+</sup> Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time
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