Isabella Rossetto
0000-0002-9397-6146
8 papers found
Refreshing results…
2DEG Retraction and Potential Distribution of GaN–on–Si HEMTs Investigated Through a Floating Gate Terminal
Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin
Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation
Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
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