Uttam Singsietti
0000-0003-1190-7815
5 papers found
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Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies
Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices
Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX
Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage
Schottky diode characteristics on high-growth rate LPCVD β-Ga2O3 films on (010) and (001) Ga2O3 substrates
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