Baile Chen
0000-0002-3265-5787
ShanghaiTech University
5 papers found
Refreshing results…
Small V th Shift and Low Dynamic R on in GaN MOSHEMT With ZrO2 Gate Dielectric
Large redshift in photoluminescence of InAs/AlAs short-period superlattices due to highly ordered lateral composition modulation
Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si
Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs
Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K
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