Simoen Eddy
0000-0002-5218-4046
Ghent University
5 papers found
Refreshing results…
Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy
A Deep Level Transient Spectroscopy Study of Hole Traps in GexSe1−x-based Layers for Ovonic Threshold Switching Selectors
An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method
Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration
Impact of ALD TiN Capping Layer on Interface Trap and Channel Hot Carrier Reliability of HKMG nMOSFETs
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