Naoteru Shigekawa
0000-0001-7454-8640
4 papers found
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Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding
Fabrication of β-Ga2O3/Si heterointerface and characterization of interfacial structures for high-power device applications
Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties
Impact of focused ion beam on structural and compositional analysis of interfaces fabricated by surface activated bonding
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