Kei May Lau
Hong Kong University of Science and Technology
12 papers found
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545-mA/mm E-Mode Recessed-Gate GaN MOSHEMT (Vth > 4 V) by Ion Beam Etching
UploadDynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer
Download from doi.orgComparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K
Download from doi.orgHigh-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric
UploadGaAs Solar Cells on Nanopatterned Si Substrates
Download from ieeexplore.ieee.orgRoom-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands
Download from orca.cf.ac.ukInGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands
Download from iopscience.iop.orgMissing publications? Search for publications with a matching author name.