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Memristive Devices for Time Domain Compute-in-Memory
UploadEffect of electron conduction on the read noise characteristics in ReRAM devices
Download from doi.orgReliability aspects of binary vector-matrix-multiplications using ReRAM devices
Download from doi.orgEndurance of 2 Mbit Based BEOL Integrated ReRAM
Download from doi.orgStandards for the Characterization of Endurance in Resistive Switching Devices
UploadTrade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
Download from onlinelibrary.wiley.comSpectroscopic elucidation of ionic motion processes in tunnel-oxide based memristive devices
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