Martin Stutzmann - Dissemin

Papers authored by Martin Stutzmann

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2004 A. Baumer, M. Stutzmann

, M. S. Brandt, F. C. K. Au, S. T. Lee

Paramagnetic defects of silicon nanowires

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Olaf Gelhausen, Enno Malguth, Matthew R. Phillips, Ewa M. Goldys, M. Strassburg, Axel Hoffmann, T. Graf, M. Gjukic, M. Stutzmann

Doping-level dependent optical properties of GaN:Mn

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H. Möller, J. Stoemenos, S. Zappe, M. Eickhoff

, G. Kroetz, M. Stutzmann

Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition

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William Burdett, Olena Lopatiuk, Leonid Chernyak, Martin Hermann, Martin Stutzmann

, Martin Eickhoff

Electron injection-induced effects in Mn-doped GaN

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M. Eickhoff

, M. Stutzmann

Influence of crystal defects on the piezoresistive properties of 3C–SiC

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2003 A. T. Winzer, C. Buchheim, R. Goldhahn

, G. Gobsch, A. Link, O. Ambacher, M. Eickhoff

, M. Stutzmann

Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures

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H. Larsson, D. Gogova, A. Kasic, R. Yakimova, B. Monemar, C. R. Miskys, M. Stutzmann

Free-standing HVPE-GaN layers

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A. Cros, N. V. Joshi, T. Smith, A. Cantarero, G. Martínez Criado

, O. Ambacher, M. Stutzmann

Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire

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T. Graf, T. Ishikawa, K. M. Itoh, E. E. Haller, M. Stutzmann

, M. S. Brandt

Hyperfine interactions at dangling bonds in amorphous germanium

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G. Steinhoff, O. Purrucker, M. Tanaka, M. Stutzmann

, M. Eickhoff

AlxGa1–xN—A New Material System for Biosensors

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A. T. Winzer, R. Goldhahn

, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann

, Y. Smorchkova, U. K. Mishra, J. S. Speck

Photoreflectance studiesof N- and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG

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Christoph E. Nebel, Claudio R. Miskys, Jose A. Garrido, Martin Hermann, Oliver Ambacher, Martin Eickhoff

, Martin Stutzmann

AlN/Diamond np-junctions

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A. Janotta, M. Schmidt, R. Janssen, M. Stutzmann

, C.-H. Buchal

Photoluminescence of Er3+-implanted amorphous hydrogenated silicon suboxides

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Ja A. Garrido, Garrido Ja, Ce E. Nebel, R. Todt, Mc-C. Amann, Oa A. Williams, R. Jackman, Milos Nesladek, M. Stutzmann

Novel in-plane gate devices on hydrogenated diamond surfaces

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Claudio R. Miskys, Michael K. Kelly, Oliver Ambacher, Martin Stutzmann

Freestanding GaN‐substrates and devices

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O. Ambacher, M. Eickhoff

, A. Link, M. Hermann, M. Stutzmann

, F. Bernardini, V. Fiorentini, Y. Smorchkova, J. Speck, U. Mishra, W. Schaff, V. Tilak, L. F. Eastman

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

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M. Eickhoff

, J. Schalwig, G. Steinhoff, O. Weidemann, L. Görgens, R. Neuberger, M. Hermann, B. Baur, G. Müller, O. Ambacher, M. Stutzmann

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures - Part B: Sensor applications

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G. Martinez Criado

, M. Kuball, M. Benyoucef, A. Sarua, E. Frayssinet, B. Beaumont, P. Gibart, C. R. Miskys, M. Stutzmann

Free-standing GaN grown on epitaxial lateral overgrown GaN substrates

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G. Steinhoff, M. Hermann, W. J. Schaff, L. F. Eastman, M. Stutzmann

, M. Eickhoff

pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

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B. Rezek

, C. Sauerer, J. A. Garrido, Garrido Ja, C. E. Nebel, M. Stutzmann

, E. Snidero, P. Bergonzo

Scribing into hydrogenated diamond surfaces using atomic force microscopy

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Papers authored by Martin Stutzmann