Michael J. Uren - Dissemin

Papers authored by Michael J. Uren

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2015 Tommaso Brazzini, Michael A. Casbon, Huarui Sun

, Michael J. Uren

, Jonathan Lees, Paul J. Tasker, Helmut Jung, Hervé Blanck, Martin Kuball

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

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William M. Waller, Serge Karboyan, Michael J. Uren

, Kean Boon Lee, Peter A. Houston, David J. Wallis

, Ivor Guiney, Colin J. Humphreys, Martin Kuball

Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

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Michael J. Uren

, Markus Caesar, Indranil Chatterjee, Serge Karboyan, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, P. Vanmeerbeek, Martin Kuball

Electron Trapping in GaN-on-Si Power HEMTs

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Michael J. Uren

, Markus Caesar, Serge Karboyan, Peter Moens, Piet Vanmeerbeek, Martin Kuball

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

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Tommaso Brazzini, Michael A. Casbon, Huarui Sun

, Michael J. Uren

, Jonathan Lees, Paul J. Tasker, Helmut Jung, Hervé Blanck, Martin Kuball

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

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P. Moens, P. Vanmeerbeek, A. Banerjee, M. Caesar, J. Guo, C. Liu, A. Salih, M. Meneghini, Martin Kuball, Michael J. Uren

, G. Meneghesso, E. Zanoni, M. Tack

On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

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P. Moens, P. Vanmeerbeek, A. Banerjee, J. Guo, C. Liu, P. Coppens, A. Salih, M. Tack, M. Caesar, M. J. Uren

, M. Kuball, M. Meneghini

, G. Meneghesso, E. Zanoni

On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

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Kean B. Lee, Ivor Guiney, Sheng Jiang, Zaffar H. Zaidi, Hongtu Qian, David J. Wallis

, Michael J. Uren

, Martin Kuball, Colin J. Humphreys, Peter A. Houston

Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

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Huarui Sun

, Miguel Montes Bajo, Michael J. Uren

, Martin Kuball

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

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2014 H. Sun

, M. Montes Bajo, M. J. Uren

, M. Kuball

Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation

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M. J. Uren

, M. Kuball

GaN transistor reliability and instabilities

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N. Killat, M. J. Uren

, S. Keller, S. Kolluri, U. K. Mishra, M. Kuball

Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

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Janina Moereke, Janina Möreke, Michael J. Uren

, Sergei V. Novikov, C. Thomas Foxon, C. Thomas Foxon, Shahrzad Hosseini Vajargah, Shahrzad Hosseini Vajargah, David J. Wallis

, Colin J. Humphreys, Sarah J. Haigh, Abdullah Al-Khalidi

, Edward Wasige, Iain Thayne, Martin H. H. Kuball

Investigation of the GaN-on-GaAs interface for vertical power device applications

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Michael J. Uren

, Markus Cäsar, Mark A. Gajda, Martin Kuball

Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

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M. Montes Bajo, H. Sun

, M. J. Uren

, M. Kuball

Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

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Michael J. Uren

, Marco Silvestri, Markus Caesar, James W. Pomeroy, Godefridus Hurkx, Jeroen Croon, Jan Šonský, Martin Kuball

Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

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Michael J. Uren

, Marco Silvestri, Markus Casar, Godefridus Adrianus Maria Hurkx, Jeroen A. Croon, Jan Sonsky, Martin Kuball

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

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Janina Möreke, Chris Hodges, Laura L. E. Mears, Michael J. Uren

, Robert M. Richardson

, Martin Kuball

Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors

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2013 Nicole Killat, Michael J. Uren

, David J. Wallis, Trevor Martin, Martin Kuball

Fe-doped AlGaN/GaN HEMTs

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William McGenn, Jeff Powell, Michael Uren

, Johannes Benedikt, Paul Tasker

RF Waveform Method for the Determination of the Safe Operating Area of GaN HFET's for Amplifiers Subjected to High Output VSWR

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Papers authored by Michael J. Uren